English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26A (Ta), 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.5mOhm @ 26A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 61 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3800 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 65W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-PQFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK9615-100E,118Rochester Electronics |
MOSFET N-CH 100V 66A D2PAK |
|
SQD25N15-52_GE3Vishay / Siliconix |
MOSFET N-CH 150V 25A TO252 |
|
IPD80R1K4P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO252 |
|
RYC002N05T316ROHM Semiconductor |
MOSFET N-CHANNEL 50V 200MA SST3 |
|
STF22NM60NSTMicroelectronics |
MOSFET N-CH 600V 16A TO220FP |
|
BSZ160N10NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8A/40A 8TSDSON |
|
SIRC06DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 32A/60A PPAK SO8 |
|
FDBL0090N40Rochester Electronics |
MOSFET N-CH 40V 240A 8HPSOF |
|
NVMFS5C430NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 38A/200A 5DFN |
|
PSMN2R2-40PS,127Nexperia |
MOSFET N-CH 40V 100A TO220AB |
|
PMCM4402UPEZNexperia |
MOSFET P-CH 20V 4WLCSP |
|
DMN313DLT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 270MA SOT523 |
|
APT5010JVRU2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 44A SOT227 |
