English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 4.1A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSC0906NSRochester Electronics |
BSC0906 - 12V-300V N-CHANNEL POW |
|
STW63N65DM2STMicroelectronics |
MOSFET N-CH 650V 65A TO247 |
|
ISL9N312AD3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ650Rochester Electronics |
MOSFET P-CH 60V 12A TO220ML |
|
SIR616DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 20.2A PPAK SO-8 |
|
IPD60R750E6BTMA1Rochester Electronics |
MOSFET N-CH 600V 5.7A TO252 |
|
IXTN170P10PWickmann / Littelfuse |
MOSFET P-CH 100V 170A SOT227B |
|
NTD60N03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSP88L6327HTSA1Rochester Electronics |
MOSFET N-CH 240V 350MA SOT223-4 |
|
BSC0909NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 34V 12A/44A TDSON |
|
IRF9630STRLPBFVishay / Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
|
EKI04027Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 85A TO220-3 |
|
AOSP36326CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 12A 8SOIC |
