English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ II |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 158mOhm @ 10.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 1735 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 35W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FP |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMP213DUFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 145MA 3DFN |
|
SKI04044Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 80A TO263 |
|
NVD5890NT4GRochester Electronics |
24A, 40V, 0.0037OHM, N-CHANNEL, |
|
STFI26N60M2STMicroelectronics |
MOSFET N-CH 600V 20A I2PAKFP |
|
IRF630SPBFVishay / Siliconix |
MOSFET N-CH 200V 9A D2PAK |
|
DMP3028LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CHANNEL 30V 27A TO252 |
|
IXTA2N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 2A TO263 |
|
DMG1013UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 820MA SOT323 |
|
IRFHM8337TRPBFRochester Electronics |
IRFHM8337 - HEXFET POWER MOSFET |
|
IPB240N04S4R9ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 240A TO263-7 |
|
AOT095A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 38A TO220 |
|
DMNH4005SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 150A TO220AB |
|
2SK2094TLROHM Semiconductor |
MOSFET N-CH 60V 2A CPT3 |
