类型 | 描述 |
---|---|
系列: | TrenchFET® Gen IV |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 25 V |
电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 1.4mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 26 nC @ 4.5 V |
vgs (最大值): | +20V, -16V |
输入电容 (ciss) (max) @ vds: | 2650 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 62.5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB80N07S405ATMA1Rochester Electronics |
MOSFET N-CH 75V 80A TO263-3 |
|
FDMS86202ET120Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 120V 13.5/102A PWR56 |
|
TK72A12N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 120V 72A TO220SIS |
|
SPP08P06PXKRochester Electronics |
P-CHANNEL POWER MOSFET |
|
C3M0016120KWolfspeed - a Cree company |
SICFET N-CH 1.2KV 115A TO247-4 |
|
RS1L180GNTBROHM Semiconductor |
MOSFET N-CH 60V 18A/68A 8HSOP |
|
TSM2N7002KCX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 300MA SOT23 |
|
TK110A10PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
SIHG22N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 22A TO247AC |
|
DMN6022SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 6.9A 8SO |
|
PMPB43XPE,115Nexperia |
MOSFET P-CH 20V 5A DFN2020MD-6 |
|
FDPF18N50TSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 18A TO220F |
|
RM10N100S8Rectron USA |
MOSFET N-CHANNEL 100V 10A 8SOP |