English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 890mA (Tj) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 1Ohm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 1.6V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 125 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.6W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-243AA (SOT-89) |
| 包/箱: | TO-243AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD040N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-3 |
|
IPI144N12N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD380P06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 35A TO252-3 |
|
R5009ANJTLROHM Semiconductor |
MOSFET N-CH 500V 9A LPTS |
|
AOT430Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 80A TO220 |
|
FQP3N30Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 3.2A TO220-3 |
|
IRFH5104TR2PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 24A/100A PQFN |
|
BTS115ANKSA1Rochester Electronics |
MOSFET N-CH 50V 15.5A TO220AB |
|
CSD17552Q3ATexas Instruments |
MOSFET N-CH 30V 15A/60A 8SON |
|
FQA8N90C-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 8A TO3PN |
|
IPP65R050CFD7AAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 45A TO220-3 |
|
IRFR9310TRPBFVishay / Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
|
DMN3065LW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT-323 |
