类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tube |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 165mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 790µA |
栅极电荷 (qg) (max) @ vgs: | 52 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2000 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 192W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO262-3 |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TK20G60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 20A D2PAK |
|
TK12E80W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 11.5A TO220 |
|
TPN3300ANH,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 9.4A 8TSON |
|
IXFR26N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 15A ISOPLUS247 |
|
IPD038N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
IRFB9N60APBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 9.2A TO220AB |
|
SIR804DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
2SK3325B-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI8481DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 20V 9.7A 4MICRO FOOT |
|
IPD60N10S4L12ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 60A TO252-3 |
|
SI7390DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
|
RM140N150T2Rectron USA |
MOSFET N-CH 150V 140A TO220-3 |
|
TSM4NC50CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 500V 4A TO252 |