English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 35mOhm @ 5.6A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 47 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 1250 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.5W (Ta), 19W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SC-70-6 Single |
| 包/箱: | PowerPAK® SC-70-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SCT2080KEHRC11ROHM Semiconductor |
SICFET N-CH 1200V 40A TO247N |
|
SIR180DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 32.4A/60A PPAK |
|
IRFP4004PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO247AC |
|
BUK7506-55B,127Rochester Electronics |
MOSFET N-CH 55V 75A TO220AB |
|
IPAN60R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220 |
|
IRF4104SPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
BUK663R7-75C,118Rochester Electronics |
PFET, 120A I(D), 75V, 0.0058OHM, |
|
HUF75345G3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A TO247-3 |
|
NTD3813N-1GRochester Electronics |
MOSFET N-CH 16V 9.6A/51A IPAK |
|
IXFP16N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 16A TO220AB |
|
AUIRFZ24NSTRLIR (Infineon Technologies) |
MOSFET N-CH 55V 17A DPAK |
|
NVGS3443T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.1A 6TSOP |
|
BSL211SPL6327Rochester Electronics |
P-CHANNEL POWER MOSFET |
