类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 36µA |
栅极电荷 (qg) (max) @ vgs: | 6.6 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3100 pF @ 30 V |
场效应管特征: | Standard |
功耗(最大值): | 69W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TSDSON-8-FL |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPN80R3K3P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.9A SOT223 |
|
DMN2400UFB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 750MA 3DFN |
|
FDD6612ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.5A/30A DPAK |
|
RTQ020N05HZGTRROHM Semiconductor |
MOSFET N-CH 45V 2A TSMT6 |
|
SIR870ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
STF10N65K3STMicroelectronics |
MOSFET N-CH 650V 10A TO220FP |
|
NTHS4501NT1GRochester Electronics |
MOSFET N-CH 30V 4.9A CHIPFET |
|
SUM90N10-8M2P-E3Vishay / Siliconix |
MOSFET N-CH 100V 90A TO263 |
|
FQB6N70TMRochester Electronics |
MOSFET N-CH 700V 6.2A D2PAK |
|
IPP77N06S3-09Rochester Electronics |
MOSFET N-CH 55V 77A TO220-3 |
|
R5016FNJTLROHM Semiconductor |
MOSFET N-CH 500V 16A LPT |
|
IRFB7730PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 195A TO220AB |
|
SIA446DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 7.7A PPAK SC70 |