English
简体中文
MOSFET N-CH 650V 10A DPAK
IC TXRX/ISO HALF 1/1 16SOIC
IC AMP CLASS D STER 2.2W 28TQFN
IC SERIALIZER SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperFET® III |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 360mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 730 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STI30N65M5STMicroelectronics |
MOSFET N-CH 650V 22A I2PAK |
|
RTR040N03HZGTLROHM Semiconductor |
MOSFET N-CH 30V 4A TSMT3 |
|
AOD280A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 14A TO252 |
|
FDD10N20LZTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.6A DPAK |
|
SISS94DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 5.4A/19.5A PPAK |
|
SIHF12N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO220 |
|
NTD5865NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 46A DPAK |
|
BUK7Y102-100B,115Nexperia |
MOSFET N-CH 100V 15A LFPAK56 |
|
SIHF9630STRL-GE3Vishay / Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
|
TPH2900ENH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 200V 33A 8SOP |
|
NDD04N60Z-1GRochester Electronics |
POWER MOSFET 600V |
|
IPP80N06S4L07AKSA2Rochester Electronics |
PFET, 80A I(D), 60V, 0.0064OHM, |
|
IXTN240N075L2Wickmann / Littelfuse |
MOSFET N-CH 75V 225A SOT227B |