English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ II |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 189 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FCD7N60TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7A DPAK |
|
IRF1018ESTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 79A D2PAK |
|
TPN11006PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 26A 8TSON |
|
IRL1404PBFRochester Electronics |
HEXFET POWER MOSFET |
|
2SK3229-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB80N04S2H4ATMA2Rochester Electronics |
IPB80N04 - 20V-40V N-CHANNEL AUT |
|
IXFP5N100PMWickmann / Littelfuse |
MOSFET N-CH 1000V 2.3A TO220 |
|
FJ6K01010LPanasonic |
MOSFET P-CH 12V 4A WSMINI6 |
|
STF30N10F7STMicroelectronics |
MOSFET N-CH 100V 24A TO220FP |
|
DMN3033LSNQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6A SC59 |
|
IXTK120N20PWickmann / Littelfuse |
MOSFET N-CH 200V 120A TO264 |
|
DMP3004SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 16.2A 8SO T&R 2 |
|
IPP65R225C7Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
