类型 | 描述 |
---|---|
系列: | POWER MOS 8™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 130mOhm @ 21A, 10V |
vgs(th) (最大值) @ id: | 5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 170 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 6810 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 625W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 [B] |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF6725MTRPBFRochester Electronics |
DIRECTFET POWER MOSFET |
|
RSD130P10TLROHM Semiconductor |
MOSFET P-CH 100V 13A CPT3 |
|
MSJPF11N65-BPMicro Commercial Components (MCC) |
MOSFET N-CH 650V 11A TO220F |
|
SSM3K7002KF,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 400MA S-MINI |
|
CEDM7001 BK PBFREECentral Semiconductor |
MOSFET N-CH 20V 100MA SOT883 |
|
NP90N04VLG-E1-AYRochester Electronics |
MOSFET N-CH 40V 90A TO252 |
|
SIHB33N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A D2PAK |
|
IRF9640LPBFVishay / Siliconix |
MOSFET P-CH 200V 11A I2PAK |
|
STF28NM60NDSTMicroelectronics |
MOSFET N-CH 600V 23A TO220FP |
|
AO4453Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 12V 9A 8SOIC |
|
SKI07114Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 62A TO263 |
|
AOD66406Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 25A/60A TO252 |
|
BUK7E1R6-30E,127Rochester Electronics |
MOSFET N-CH 30V 120A I2PAK |