English
简体中文
MOSFET N-CH 60V 27A D2PAK
LASER DIODE 406NM 105MW TO18
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 27A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 42mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 46 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.2 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 88.2W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK2009TE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 200MA SC59-3 |
|
TPIC1505DWRRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIHG018N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 99A TO247AC |
|
SI4435DYTRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 8A 8SO |
|
HUF76145S3SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN4R4-30MLC,115Nexperia |
MOSFET N-CH 30V 70A LFPAK33 |
|
FDD6685Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 11A/40A TO252 |
|
RQ3E130MNTB1ROHM Semiconductor |
MOSFET N-CH 30V 13A HSMT8 |
|
ZVP4424ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 240V 200MA E-LINE |
|
NTHS5445T1Rochester Electronics |
MOSFET P-CH 8V 5.2A CHIPFET |
|
AUIRLR3705ZRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
SI4178DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 12A 8SO |
|
PSMN5R0-40MLHXNexperia |
MOSFET N-CH 40V 85A LFPAK33 |