English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 40mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 325 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.7W (Ta), 2.7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOTF42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 39A TO220-3F |
|
BSC025N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 100A TDSON-8 |
|
STL3N65M2STMicroelectronics |
MOSFET N-CH 650V 2.3A POWERFLAT |
|
FDU8882Rochester Electronics |
MOSFET N-CH 30V 12.6A/55A IPAK |
|
IPI70N12S311AKSA1Rochester Electronics |
MOSFET N-CH 120V 70A TO262-3 |
|
SIHFR9310TR-GE3Vishay / Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
|
TJ15S06M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 15A DPAK |
|
TK040N65Z,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 57A TO247 |
|
TPH2010FNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 5.6A 8SOP |
|
SIHD180N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A TO252AA |
|
AUIRLS3036-7TRLIR (Infineon Technologies) |
MOSFET N-CH 60V 240A D2PAK |
|
IPB120N04S401ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 120A D2PAK |
|
STD45P4LLF6AGSTMicroelectronics |
MOSFET P-CH 40V 50A DPAK |
