English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen III |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.9A (Ta), 14A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 14.2mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4000 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN5040LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 5.2A 8SO T&R 2 |
|
IPB024N08N5ATMA1Rochester Electronics |
MOSFET N-CH 80V 120A D2PAK |
|
MMBT7002K-AQDiotec Semiconductor |
MOSFET N-CH 60V 300MA SOT23-3 |
|
FQP30N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A TO220-3 |
|
SCTWA10N120STMicroelectronics |
IC POWER MOSFET 1200V HIP247 |
|
DMT6004LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 22A PWRDI5060 |
|
SIHH14N65EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 15A PPAK 8 X 8 |
|
IRF830PBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 4.5A TO220AB |
|
RQ3E080BNTBROHM Semiconductor |
MOSFET N-CH 30V 8A 8HSMT |
|
STT4P3LLH6STMicroelectronics |
MOSFET P-CH 30V 4A SOT23-6 |
|
IXFH12N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO247AD |
|
FDMS86152Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 14A/45A POWER56 |
|
IPC100N04S5L1R5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
