English
简体中文
N-CHANNEL POWER MOSFET
DEEP IMPACT SOCKET,17MM,1/2" DRI
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMS3600SRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SPB02N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD12CN10NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 67A TO252-3 |
|
IRFR120TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
NTB30N06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHP33N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO220AB |
|
APT12080JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 15A ISOTOP |
|
AOWF380A60CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262F |
|
STFU24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A TO220FP |
|
IPW65R050CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 45A TO247-3-41 |
|
IRF9530STRRPBFVishay / Siliconix |
MOSFET P-CH 100V 12A D2PAK |
|
IAUC90N10S5N062ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TDSON-8-34 |
|
IRLML6402TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 3.7A SOT23 |