







MOSFET P-CH 20V 14A/56A 8PQFN
MOSFET N-CH 40V 24A/157A 8PDFNU
FET RF 65V 880MHZ NI-780
XTAL OSC VCXO 36.8640MHZ CMOS
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta), 56A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 14A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 61 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 7435 pF @ 10 V |
| 场效应管特征: | - |
| 功耗(最大值): | 2.3W (Ta), 30W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-PQFN (3.3x3.3), Power33 |
| 包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SI4160DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 25.4A 8SO |
|
|
IPN65R1K5CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5.2A SOT223 |
|
|
FQU4N50TU-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 2.6A IPAK |
|
|
IPA60R210CFD7XKSA1IR (Infineon Technologies) |
LOW POWER_NEW |
|
|
FDD6780Rochester Electronics |
MOSFET N-CH 25V 16.5A/30A DPAK |
|
|
SIHFS9N60A-GE3Vishay / Siliconix |
MOSFET N-CH 600V 9.2A TO263 |
|
|
TSM70N10CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 100V 70A TO252 |
|
|
MCU05N60A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 600V 4.5A DPAK |
|
|
AUIRFU4104Rochester Electronics |
MOSFET N-CH 40V 42A TO251-3-21 |
|
|
STF28N60DM2STMicroelectronics |
MOSFET N-CH 600V 21A TO220FP |
|
|
PMPB40SNA115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
APT20M38BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 67A TO247 |
|
|
BUK6Y24-40PXNexperia |
MOSFET P-CH 40V 39A LFPAK56 |