English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.9mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 118 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 324W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPL60R2K1C6SATMA1Rochester Electronics |
600V COOLMOS N-CHANNEL POWER MOS |
|
YJQ40P03A-F1-1100HF |
P-CH MOSFET 30V 40A DFN3333-8L |
|
DMT6016LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10.6A PWRDI5060 |
|
FQP10N20CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9.5A TO220-3 |
|
STW18NM60NDSTMicroelectronics |
MOSFET N-CH 600V 13A TO247 |
|
BSC884N03MS GRochester Electronics |
MOSFET N-CH 34V 17A/85A TDSON |
|
BSZ0503NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 20A/40A TSDSON |
|
APT20M34SLLG/TRRoving Networks / Microchip Technology |
MOSFET N-CH 200V 74A D3PAK |
|
STS8N6LF6AGSTMicroelectronics |
MOSFET N-CHANNEL 60V 8A 8SO |
|
IPB60R180P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 18A D2PAK |
|
IPU95R450P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 14A TO251-3 |
|
SISS70DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 125V 8.5A/31A PPAK |
|
NTMS10P02R2Rochester Electronics |
MOSFET P-CH 20V 8.8A 8SOIC |
