类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 3.2A (Tj) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 80mOhm @ 3.2A, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 7.4 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 680 pF @ 10 V |
场效应管特征: | Schottky Diode (Isolated) |
功耗(最大值): | 1.1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | ChipFET™ |
包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF630PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 9A TO220AB |
|
R5011ANXROHM Semiconductor |
MOSFET N-CH 500V 11A TO220FM |
|
STL25N15F3STMicroelectronics |
MOSFET N-CH 150V 25A POWERFLAT |
|
IPP80N04S3-03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHB180N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A D2PAK |
|
FDB120N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 74A D2PAK |
|
FDS7060N7Rochester Electronics |
MOSFET N-CH 30V 19A 8SO |
|
SIA427ADJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 12A PPAK SC70-6 |
|
NDD60N550U1-35GRochester Electronics |
MOSFET N-CH 600V 8.2A IPAK |
|
CSD18503Q5ATTexas Instruments |
MOSFET N-CH 40V 100A 8VSON |
|
FCP25N60NRochester Electronics |
MOSFET N-CH 600V TO-220-3 |
|
EPC2029EPC |
GANFET N-CH 80V 48A DIE |
|
2SK1317-ERenesas Electronics America |
MOSFET N-CH 1500V 2.5A TO3P |