English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 240A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.1mOhm @ 168A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 300 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8850 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK (7-Lead) |
| 包/箱: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSM6J801R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A 6TSOP |
|
2SJ128-AZRochester Electronics |
POWER MOSFET |
|
STD7NS20T4STMicroelectronics |
MOSFET N-CH 200V 7A DPAK |
|
PMV20XNE215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
AON7404GAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 20A/20A 8DFN |
|
IPB60R199CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16A TO263-3 |
|
SISS80DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 58.3A/210A PPAK |
|
IRFZ24NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 17A TO220AB |
|
STL8N65M2STMicroelectronics |
MOSFET N-CH 650V 5A PWRFLAT56 HV |
|
CSD23201W10Rochester Electronics |
MOSFET P-CH 12V 2.2A 4DSBGA |
|
IXTP1R6N50D2Wickmann / Littelfuse |
MOSFET N-CH 500V 1.6A TO220AB |
|
STU7NM60NSTMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
|
STL105NS3LLH7STMicroelectronics |
MOSFET N-CH 30V 105A POWERFLAT |
