类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 16.5mOhm @ 8A, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 2mA |
栅极电荷 (qg) (max) @ vgs: | 16.2 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 1810 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 950mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TSMT6 (SC-95) |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTB30N20T4GRochester Electronics |
MOSFET N-CH 200V 30A D2PAK |
|
PMV48XP/MI215Rochester Electronics |
P-CHANNEL MOSFET |
|
SIHG22N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 20A TO247AC |
|
IPD60R360PFD7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10A TO252-3 |
|
APT13F120SRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 14A D3PAK |
|
BSS123TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
NTMFD4951NFT3GRochester Electronics |
MOSFET N-CH 30V 10.8A 8DFN DL |
|
H7N0308CF-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTA08N100D2-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO263 |
|
IXFH110N25TWickmann / Littelfuse |
MOSFET N-CH 250V 110A TO247AD |
|
DMP3098LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 5.3A 8SOP |
|
DMT10H015SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 54A TO252 |
|
FDI025N06Rochester Electronics |
MOSFET N-CH 60V 265A I2PAK |