类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 2mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 3.8V @ 280µA |
栅极电荷 (qg) (max) @ vgs: | 223 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 16900 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 375W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR330BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPB18P06PRochester Electronics |
MOSFET P-CH 60V 18.7A D2PAK |
|
FQD20N06LETMRochester Electronics |
MOSFET N-CH 60V 17.2A DPAK |
|
IXTQ22N60PWickmann / Littelfuse |
MOSFET N-CH 600V 22A TO3P |
|
RSD131P10TLROHM Semiconductor |
MOSFET P-CH 100V 13A CPT3 |
|
RM2310Rectron USA |
MOSFET N-CHANNEL 60V 3A SOT23 |
|
MCH6341-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 5A 6MCPH |
|
FDMS86520Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 14A/42A 8PQFN |
|
FDMC8651Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 15A/20A POWER33 |
|
STB80NF55-06T4STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
|
CPH5871-TL-WRochester Electronics |
3.5A, 30V, N-CHANNEL, MOSFET |
|
MGSF3441VT1Rochester Electronics |
P-CHANNEL MOSFET |
|
ISL9N312AD3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |