MOSFET N-CH 100V 23A TO220AB
OPTOISO 5KV 1CH GATE DRVR 16SOIC
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 23A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 75mOhm @ 13A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1210 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 99W (Ta) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SFR9224TFRochester Electronics |
P-CHANNEL POWER MOSFET |
|
IPB034N06L3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A D2PAK |
|
IRFSL3806PBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
RJK0348DSP-00#J0Rochester Electronics |
MOSFET N-CH 30V 22A 8SOP |
|
SQM60N20-35_GE3Vishay / Siliconix |
MOSFET N-CH 200V 60A TO263 |
|
TSM10N80CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 9.5A TO220 |
|
IXTQ88N30PWickmann / Littelfuse |
MOSFET N-CH 300V 88A TO3P |
|
IRFU310BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS4H02NFT1GRochester Electronics |
MOSFET N-CH 25V 37A/193A 5DFN |
|
STB4NK60Z-1STMicroelectronics |
MOSFET N-CH 600V 4A I2PAK |
|
SIRA20BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 82A/335A PPAK |
|
STP21N90K5STMicroelectronics |
MOSFET N-CH 900V 18.5A TO220-3 |
|
IPZ40N04S5L7R4ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON |