类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Ta), 55.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 6mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 22.6 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1320 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 27.8W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI3333-8 |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVTFS4C25NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.1A/22.1A 8DFN |
|
SIS126DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 12A/45.1A PPAK |
|
IPP45P03P4L11AKSA1Rochester Electronics |
MOSFET P-CH 30V 45A TO220-3 |
|
FQPF5N15Rochester Electronics |
MOSFET N-CH 150V 4.2A TO220F |
|
SIRA12DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 25A PPAK SO-8 |
|
BSH103,235Nexperia |
MOSFET N-CH 30V 850MA TO236AB |
|
BSP135L6433Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AONV210A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4.1A/20A 4DFN |
|
IPP65R150CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO220-3 |
|
IRFR8314TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 90A DPAK |
|
SIHFB11N50A-E3Vishay / Siliconix |
MOSFET N-CH 500V 11A TO220AB |
|
IPP057N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 80A TO220-3 |
|
IXTH110N25TWickmann / Littelfuse |
MOSFET N-CH 250V 110A TO247 |