MOSFET N-CH 40V 19A/40A 8DFN
MOSFET N-CH 30V 13A 8SO
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 11mOhm @ 7.3A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 79 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1800 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SO |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB022N04LGATMA1Rochester Electronics |
MOSFET N-CH 40V 90A D2PAK |
|
BSC036NE7NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 75V 100A TDSON |
|
HUF75542P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 75A TO220-3 |
|
ISL9N322AP3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMFS5C460NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 19A/71A 5DFN |
|
FDS6680SRochester Electronics |
MOSFET N-CH 30V 11.5A 8SOIC |
|
FQA13N80-F109Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IRF7324D1TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 2.2A 8SO |
|
ZXM62P03E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 1.5A SOT26 |
|
IXFP26N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 26A TO220AB |
|
SQJQ404E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
|
SSM3K35CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 180MA CST3 |
|
PHP30NQ15T,127Rochester Electronics |
MOSFET N-CH 150V 29A TO220AB |