English
简体中文
MOSFET P CH 20V 6A UF6
OPTOISO 1.5KV TRI-STATE 8DIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVI |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 22.5mOhm @ 6A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 23.1 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1650 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | UF6 |
| 包/箱: | 6-SMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD5N95K5STMicroelectronics |
MOSFET N-CH 950V 3.5A DPAK |
|
PSMN4R3-40MLHXNexperia |
MOSFET N-CH 40V 95A LFPAK33 |
|
TJ50S06M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 50A DPAK |
|
STF19NM50NSTMicroelectronics |
MOSFET N-CH 500V 14A TO220FP |
|
DMT12H090LFDF4-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 115V 3.4A 6DFN |
|
IPP80N06S2L05AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3 |
|
APT94N65B2C6Roving Networks / Microchip Technology |
MOSFET N-CH 650V 95A T-MAX |
|
SI7148DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 75V 28A PPAK SO-8 |
|
STL80N75F6STMicroelectronics |
MOSFET N-CH 75V 80A POWERFLAT |
|
BSL202SNL6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPD03N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 90A TO252-3 |
|
SI7148DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 75V 28A PPAK SO-8 |
|
STW38N65M5STMicroelectronics |
MOSFET N-CH 650V 30A TO247 |