English
简体中文
MOSFET N-CH 600V 11A TO220
JFET N-CH 40V 400MW TO92-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | aMOS5™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 380mOhm @ 5.5A, 10V |
| vgs(th) (最大值) @ id: | 3.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 955 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 131W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF644STRRPBFVishay / Siliconix |
MOSFET N-CH 250V 14A D2PAK |
|
IPD50N10S3L16ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 50A TO252-3 |
|
BSP220,115Nexperia |
MOSFET P-CH 200V 225MA SOT223 |
|
FDP2614Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 62A TO220-3 |
|
IRFB23N20DPBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
DMNH4011SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 13A PWRDI5060 |
|
2SK937Y4Rochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
APT6010B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 54A T-MAX |
|
IPP072N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO220-3 |
|
SSM3K16CTC,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 200MA CST3C |
|
IXFK38N80Q2Wickmann / Littelfuse |
MOSFET N-CH 800V 38A TO264AA |
|
SUD50N04-8M8P-4BE3Vishay / Siliconix |
MOSFET N-CH 40V 14A/50A DPAK |
|
STF10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |