类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 1.8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 3Ohm @ 900mA, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 170 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 20W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7456DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 5.7A PPAK SO-8 |
|
IXFN32N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 28A SOT227B |
|
IRFP3710PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 57A TO247AC |
|
AON6452Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 6.5A/26A 8DFN |
|
DMN67D8LW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 240MA SOT323 |
|
SPI08N50C3XKRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP50R199CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 550V 17A TO220-3 |
|
IXTA1N170DHVWickmann / Littelfuse |
MOSFET N-CH 1700V 1A TO263 |
|
BSS84-HFComchip Technology |
MOSFET P-CH 50V 130MA SOT23-3 |
|
TSM70N900CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 4.5A TO251 |
|
NTB75N03RRochester Electronics |
MOSFET N-CH 25V 9.7A/75A D2PAK |
|
PSMN165-200K518Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMTH4005SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 95A TO252 |