类型 | 描述 |
---|---|
系列: | HEXFET®, StrongIRFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 240A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 1mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 315 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 10250 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 245W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK-7 |
包/箱: | TO-263-7, D²Pak (6 Leads + Tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GKI06185Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 7A 8DFN |
|
FDS6572ARochester Electronics |
MOSFET N-CH 20V 16A 8SOIC |
|
BSC118N10NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 11A/71A TDSON |
|
IPB80R290C3ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL3803STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 140A D2PAK |
|
STD7NM64NSTMicroelectronics |
MOSFET N-CH 640V 5A DPAK |
|
RS3E075ATTBROHM Semiconductor |
MOSFET P-CH 30V 8SOP |
|
STF10P6F6STMicroelectronics |
MOSFET P-CH 60V 10A TO220FP |
|
IXTP90N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 90A TO220AB |
|
PMPB13XNE,115Rochester Electronics |
MOSFET N-CH 30V 8A DFN2020MD-6 |
|
DMP21D0UT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 590MA SOT523 |
|
FDS6614ARochester Electronics |
MOSFET N-CH 30V 9.3A 8SOIC |
|
EPC2036EPC |
GANFET N-CH 100V 1.7A DIE |