English
简体中文
CURR SENSE XFMR 5A T/H
MOSFET N-CH 100V 27.5A PPAK SO-8
RF SHLD COVER 0.941"X1.886" SLDR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 27.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 23.5mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 730 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5W (Ta), 35.7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RD3H160SPTL1ROHM Semiconductor |
MOSFET P-CH 45V 16A TO252 |
|
EPC2040EPC |
GANFET NCH 15V 3.4A DIE |
|
TPH3R203NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 47A 8SOP |
|
FDD86113LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 4.2A/5.5A DPAK |
|
H5N5005PL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDWS86068-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 80A 8DFN |
|
STL19N60M2STMicroelectronics |
MOSFET N-CH 600V 11A PWRFLAT HV |
|
STFI9N80K5STMicroelectronics |
MOSFET N-CH 800V 7A I2PAKFP |
|
STB7N52K3STMicroelectronics |
MOSFET N-CH 525V 6A D2PAK |
|
AOB292LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 105A TO263 |
|
2N7002H-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 170MA SOT23 |
|
IRFS4228PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 83A D2PAK |
|
TK3P50D,RQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 3A DPAK |