English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Ta), 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.1mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2600 pF @ 15 V |
| 场效应管特征: | Schottky Diode (Body) |
| 功耗（最大值）: | 2.1W (Ta), 69W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TSDSON-8-FL |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTE66NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 14A TO220 |
|
UPA2719GR-E2-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF3415STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 43A D2PAK |
|
FCP16N60NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 16A TO220-3 |
|
PMV90ENE215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
APT5018SFLLG/TRRoving Networks / Microchip Technology |
MOSFET N-CH 500V 27A D3PAK |
|
NTR4501NST1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SOT23 |
|
MTP23P06VGRochester Electronics |
MOSFET P-CH 60V 23A TO220AB |
|
PH8030L,115Rochester Electronics |
MOSFET N-CH 30V 76.7A LFPAK56 |
|
2SK4099LS-1ERochester Electronics |
MOSFET N-CH 600V 6.9A TO220F-3FS |
|
NTMFS6B14NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A/50A 5DFN |
|
IXTY14N60X2Wickmann / Littelfuse |
MOSFET N-CH 600V 14A TO252 |
|
IPA60R120P7XKSA1Rochester Electronics |
IPA60R120 - COOLMOS, 600V SUPER |
