类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RF4E080BNTRROHM Semiconductor |
MOSFET N-CH 30V 8A HUML2020L8 |
|
NTD4815NH-35GRochester Electronics |
MOSFET N-CH 30V 6.9A/35A IPAK |
|
IRFBC30PBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 3.6A TO220AB |
|
NTMFS4939NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.3A/53A 5DFN |
|
DMG8N65SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 650V 8A TO220AB |
|
BSD214SNH6327XTSA1Rochester Electronics |
MOSFET N-CH 20V 1.5A SOT363-6 |
|
IRFR9110PBFVishay / Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
|
STW58N60DM2AGSTMicroelectronics |
MOSFET N-CH 600V 50A TO247 |
|
IRFB7446GPBFRochester Electronics |
IRFB7446 - POWER MOSFET |
|
IPL60R065C7AUMA1IR (Infineon Technologies) |
MOSFET HIGH POWER_NEW |
|
SIHD6N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5A DPAK |
|
DMP2006UFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V PWRDI3333 |
|
TSM025NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 24A/161A 8PDFN |