English
简体中文
FIXED IND 1.8MH 50MA 12 OHM TH
SMD FUSE RATED CURRENT 15A/35VDC
MOSFET N-CH 40V 67A/100A 8DFN
PWR ENT MOD RCPT IEC320-C14 PNL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 67A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 0.99mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8320 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 7.3W (Ta), 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN (5x6) |
| 包/箱: | 8-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQD3N50CTFRochester Electronics |
MOSFET N-CH 500V 2.5A DPAK |
|
NTMFS4935NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/93A 5DFN |
|
SIRA52ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 40V 41.6A/131A PPAK |
|
FDMT80040DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 420A 8PQFN |
|
IRFR9010PBFVishay / Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
|
SIA416DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 11.3A PPAK |
|
TK72E08N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 72A TO220 |
|
CSD22204WTTexas Instruments |
MOSFET P-CH 8V 5A 9DSBGA |
|
STI21N65M5STMicroelectronics |
MOSFET N-CH 650V 17A I2PAK |
|
BSS123LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 170MA SOT23-3 |
|
EPC2037EPC |
GANFET N-CH 100V 1.7A DIE |
|
SSM3K324R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 4A SOT-23F |
|
AOTF20S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO220-3F |