类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 6.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 19.5mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 1.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 13 nC @ 5 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8 |
包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN2024U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.8A SOT23 T&R 3 |
|
AON6444Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 14A/81A 8DFN |
|
BSD214SNH6327Rochester Electronics |
BSD314 - 250V-600V SMALL SIGNAL/ |
|
RS1G150MNTBROHM Semiconductor |
MOSFET N-CH 40V 15A 8HSOP |
|
SQJA60EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A PPAK SO-8 |
|
XPH2R106NC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 110A 8SOP |
|
IPA037N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 75A TO220-FP |
|
RD3S075CNTL1ROHM Semiconductor |
MOSFET N-CH 190V 7.5A TO252 |
|
STFI13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A I2PAKFP |
|
DMN1045UFR4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 3.2A 3DFN |
|
SIR414DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A PPAK SO-8 |
|
STFI10N62K3STMicroelectronics |
MOSFET N CH 620V 8.4A I2PAKFP |
|
ZXMN2B14FHTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 3.5A SOT23-3 |