English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 240mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 43 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 1900 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 [B] |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FCH072N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 52A TO247-3 |
|
TSM3N100CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 1000V 2.5A TO252 |
|
ZXMP2120G4TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 200MA SOT223 |
|
TK42A12N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 120V 42A TO220SIS |
|
HUF76423D3Rochester Electronics |
MOSFET N-CH 60V 20A IPAK |
|
SI7149ADP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A PPAK SO-8 |
|
DMP4011SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 14A/74A TO252 |
|
SI8810EDB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 2.1A MICROFOOT |
|
2SK2701ASanken Electric Co., Ltd. |
MOSFET N-CH 450V 7A TO220F |
|
RM1216Rectron USA |
MOSFET P-CHANNEL 12V 16A 6DFN |
|
IRFR1205TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 44A DPAK |
|
STP13N80K5STMicroelectronics |
MOSFET N-CH 800V 12A TO220 |
|
HUF76443P3Rochester Electronics |
MOSFET N-CH 60V 75A TO220-3 |
