English
简体中文
FIXED IND 220NH 400MA 1.1 OHM
MOSFET N-CH 40V 194A TO220-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 194A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.6mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 64 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5940 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 188W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIR698DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 7.5A PPAK SO-8 |
|
IRLR8103VPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SPP04N60C2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMV45EN2215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMT3006LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A PWRDI5060 |
|
SI4838DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 17A 8SO |
|
STL25N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 16A PWRFLAT HV |
|
RFD7N10LERochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSL211SPH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 20V 4.7A TSOP-6 |
|
PMV50XPRNexperia |
MOSFET P-CH 20V 3.6A TO236AB |
|
STD6N90K5STMicroelectronics |
MOSFET N-CH 900V 6A DPAK |
|
STW50N65DM2AGSTMicroelectronics |
MOSFET N-CH 650V 28A TO247 |
|
FDA69N25Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |