类型 | 描述 |
---|---|
系列: | HiPerFET™, PolarHT™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 14A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 720mOhm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 5.5V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 61 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 3900 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 400W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-268 |
包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDZ206PRochester Electronics |
MOSFET P-CH 20V 13A 30BGA |
|
SPU07N60S5Rochester Electronics |
MOSFET N-CH 600V 7.3A TO251-3 |
|
IRFR9010TRLPBFVishay / Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
|
RF4G060ATTCRROHM Semiconductor |
PCH -40V -6A POWER, DFN2020, MOS |
|
SSM3K337R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 38V 2A SOT23F |
|
SI4920DYRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TPC6110(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 4.5A VS-6 |
|
FDB8442Rochester Electronics |
MOSFET N-CH 40V 28A/80A TO263AB |
|
NTF2955T1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
NVMFS5C468NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
IAUC100N04S6L025ATMA1IR (Infineon Technologies) |
IAUC100N04S6L025ATMA1 |
|
2SJ387L-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
AON6572Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 36A/85A 8DFN |