English
简体中文
MOSFET N-CH 24V 12A IPAK
DIODE GEN PURP 75V 300MA SOT23-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 24 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Ta), 32A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 21 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.4 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.25W (Ta), 86W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTA20N65XWickmann / Littelfuse |
MOSFET N-CH 650V 20A TO263 |
|
FCP190N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.2A TO220-3 |
|
NVMFS5C468NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 37A 5DFN |
|
IRFW720BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MTA15N06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TK14A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A TO220SIS |
|
IRFS3207ZTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A D2PAK |
|
SI4835DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 13A 8SO |
|
DMN65D8LFB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 260MA 3DFN |
|
NTMS4107NR2GRochester Electronics |
MOSFET N-CH 30V 11A 8SOIC |
|
TSM3N80CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 800V 3A TO252 |
|
IXFQ22N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 22A TO3P |
|
STP16NF06STMicroelectronics |
MOSFET N-CH 60V 16A TO220AB |