类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 99mOhm @ 16.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 3508 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 278W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247AD |
包/箱: | TO-3P-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ISL9N310AS3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFK140N30PWickmann / Littelfuse |
MOSFET N-CH 300V 140A TO264AA |
|
SIHG17N60D-GE3Vishay / Siliconix |
MOSFET N-CH 600V 17A TO247AC |
|
HUF76429D3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APTML100U60R020T1AGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 20A SP1 |
|
FCH099N60ERochester Electronics |
MOSFET N-CH 600V 37A TO247-3 |
|
FDZ7064NRochester Electronics |
MOSFET N-CH 30V 13.5A 30BGA |
|
FDPF44N25TRDTURochester Electronics |
MOSFET N-CH 250V 44A TO220F |
|
NVMFS5C404NLT1GRochester Electronics |
MOSFET N-CH 40V 49A/352A 5DFN |
|
IXTT10P60Wickmann / Littelfuse |
MOSFET P-CH 600V 10A TO268 |
|
FDPF16N50UTRochester Electronics |
MOSFET N-CH 500V 15A TO220F |
|
FQP630Rochester Electronics |
MOSFET N-CH 200V 9A TO220-3 |
|
DMG8880LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 11A TO252 |