English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 500mOhm @ 10.5A, 10V |
| vgs(th) (最大值) @ id: | 5.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 170 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6900 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264AA (IXFK) |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN8R5-100PSQNexperia |
MOSFET N-CH 100V 100A TO220AB |
|
PMN52XPXNexperia |
MOSFET P-CH 20V 3.7A 6TSOP |
|
FDS6576Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 11A 8SOIC |
|
STI18N65M5STMicroelectronics |
MOSFET N CH 650V 15A I2PAK |
|
STF20NK50ZSTMicroelectronics |
MOSFET N-CH 500V 17A TO220FP |
|
DMN66D0LW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 115MA SOT323 |
|
PSMN2R5-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
TPH3206PSTransphorm |
GANFET N-CH 600V 17A TO220AB |
|
IRFR18N15DTRLP-INFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
DMP3099L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.8A SOT23 |
|
PMV130ENEARNexperia |
MOSFET N-CH 40V 2.1A TO236AB |
|
STF13N65M2STMicroelectronics |
MOSFET N-CH 650V 10A TO220FP |
|
BSZ084N08NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 40A TSDSON |
