English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.65A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 25mOhm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1643 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 810mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI3333-8 |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSC40SM120JCU2Roving Networks / Microchip Technology |
TRANS SJT N-CH 1.2KV 55A SOT227 |
|
BSC014N06NSTATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TDSON-8 FL |
|
STF100N6F7STMicroelectronics |
MOSFET N-CH 60V 46A TO220FP |
|
STD14NM50NAGSTMicroelectronics |
MOSFET N-CH 500V 12A DPAK |
|
IRLR120TRLVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
RW1A020ZPT2RROHM Semiconductor |
MOSFET P-CH 12V 2A WEMT6 |
|
IRFU1N60APBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A TO251AA |
|
NTMYS4D6N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 21A/78A LFPAK4 |
|
BUK9Y8R5-80EXNexperia |
MOSFET N-CH 80V 100A LFPAK56 |
|
IPP60R125CPRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
PMZB290UNE,315Rochester Electronics |
MOSFET N-CH 20V 1A DFN1006B-3 |
|
AOD2N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 2A TO252 |
|
IRLR9343TRPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 20A DPAK |
