类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.65mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 14 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1860 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 56W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-QFN (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRLS3036TRLRochester Electronics |
MOSFET N-CH 60V 195A D2PAK |
|
AOT14N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 14A TO220 |
|
BSC077N12NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 13.4/98A 8TDSON |
|
IRLHS6242TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 10A/12A 6PQFN |
|
BUK9Y4R8-60E,115Nexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
NTGS3130NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 4.23A 6TSOP |
|
PHB66NQ03LTRochester Electronics |
NOW NEXPERIA 66A, 25V, 0.0136OHM |
|
FQB1P50TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 1.5A D2PAK |
|
PMPB10XNXNexperia |
MOSFET N-CH 30V 9.5A DFN2020MD-6 |
|
FQPF7N65CRochester Electronics |
MOSFET N-CH 650V 7A TO220F |
|
TSM1NB60CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 1A TO252 |
|
RJJ0315DPA-00#J5ARochester Electronics |
MOSFET P-CH 30V 35A |
|
HTNFET-DHoneywell Aerospace |
MOSFET N-CH 55V 8CDIP |