English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 210mOhm @ 4.65A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.7 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 250 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 40W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK969R3-100E,118Nexperia |
MOSFET N-CH 100V 100A D2PAK |
|
2SJ655Rochester Electronics |
MOSFET P-CH 100V 12A TO220ML |
|
IXFK52N100XWickmann / Littelfuse |
MOSFET N-CH 1000V 52A TO264 |
|
VN3205N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 50V 1.2A TO92-3 |
|
IRFR430ATRLPBFVishay / Siliconix |
MOSFET N-CH 500V 5A DPAK |
|
NVMFS5C404NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 370A 5DFN |
|
IRF3805SPBFRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
MCH3477-TL-WRochester Electronics |
MOSFET N-CH 20V 4.5A SC70 |
|
HUFA75343G3Rochester Electronics |
MOSFET N-CH 55V 75A TO247-3 |
|
BSC010N04LSTATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 39A/100A TDSON |
|
FDD4141Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 10.8A/50A DPAK |
|
BSC882N03MSGATMA1Rochester Electronics |
MOSFET N-CH 34V 22A/100A TDSON |
|
HUF76113DK8TRochester Electronics |
N-CHANNEL POWER MOSFET |
