English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 800mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1.03 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 135W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK (TO-262) |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPU80R1K4P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO251-3 |
|
NTD3055L104T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A DPAK |
|
IRF740APBFVishay / Siliconix |
MOSFET N-CH 400V 10A TO220AB |
|
IPP65R190CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO220-3 |
|
BSC020N03LSGATMA2IR (Infineon Technologies) |
LV POWER MOS |
|
APT5010JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 500V 44A ISOTOP |
|
NTGS3447PT1GRochester Electronics |
MOSFET P-CH 12V 3.4A 6TSOP |
|
SCT30N120HSTMicroelectronics |
SICFET N-CH 1200V 40A H2PAK-2 |
|
IXFT24N90PWickmann / Littelfuse |
MOSFET N-CH 900V 24A TO268 |
|
SUM110N04-04-E3Vishay / Siliconix |
MOSFET N-CH 40V 110A TO263 |
|
STU16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A IPAK |
|
IXTA02N250HV-TRLWickmann / Littelfuse |
MOSFET N-CH 2500V 200MA TO263HV |
|
IXTA50N25TWickmann / Littelfuse |
MOSFET N-CH 250V 50A TO263 |
