English
简体中文
MOSFET P-CHANNEL 30V SOT23
MOD MAIN BOARD USB PORTS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 38mOhm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SJ210-T1B-ARochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
IPA50R520CPXKSA1Rochester Electronics |
7A, 500V, 0.52OHM, N-CHANNEL, M |
|
FCU850N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 6A IPAK |
|
FDD6630ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A TO252 |
|
NTMS4935NR2GRochester Electronics |
MOSFET N-CH 30V 10A 8SOIC |
|
FDD5N53TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STD13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A DPAK |
|
R6047KNZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 47A TO247 |
|
IPD26N06S2L35ATMA1Rochester Electronics |
MOSFET N-CH 55V 30A TO252-3 |
|
SI7464DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 1.8A PPAK SO-8 |
|
CSD25304W1015TTexas Instruments |
MOSFET P-CH 20V 3A 6DSBGA |
|
STF18N60M2STMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
|
FDMB668PRochester Electronics |
MOSFET P-CH 20V 6.1A 8MLP |