English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.7mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 95.6 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 7665 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF9Z34NSTRRPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 19A D2PAK |
|
BUK9Y59-60E,115Nexperia |
MOSFET N-CH 60V 16.7A LFPAK56 |
|
TBB1012MMTL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
IPD100N06S403ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TO252-3-11 |
|
RJK0213DPA-00#J53Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD390N15ALZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 26A DPAK |
|
IPAW60R190CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 26.7A TO220 |
|
FQU2N90TU-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 1.7A IPAK |
|
TK6A53D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 525V 6A TO220SIS |
|
IXFH69N30PWickmann / Littelfuse |
MOSFET N-CH 300V 69A TO247AD |
|
FDS7788Rochester Electronics |
MOSFET N-CH 30V 18A 8SOIC |
|
APT14M120SRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 14A D3PAK |
|
STW32NM50NSTMicroelectronics |
MOSFET N CH 500V 22A TO-247 |
