类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 100mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4V |
rds on (max) @ id, vgs: | 7Ohm @ 10mA, 4V |
vgs(th) (最大值) @ id: | 1.5V @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 12 pF @ 3 V |
场效应管特征: | - |
功耗(最大值): | 100mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SSSMini3-F2-B |
包/箱: | SOT-723 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MCH3374-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 3A SC70FL/MCPH3 |
|
BUK7277-55A,118Nexperia |
MOSFET N-CH 55V 18A DPAK |
|
PSMN1R4-40YLDXNexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
STP110N7F6STMicroelectronics |
MOSFET N-CHANNEL 68V 110A TO220 |
|
STH260N6F6-2STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-2 |
|
RTQ035N03TRROHM Semiconductor |
MOSFET N-CH 30V 3.5A TSMT6 |
|
STD13N65M2STMicroelectronics |
MOSFET N-CH 650V 10A DPAK |
|
RE1E002SPTCLROHM Semiconductor |
MOSFET P-CH 30V 250MA EMT3F |
|
SI4668DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 25V 16.2A 8SO |
|
2SK2729-ERochester Electronics |
MOSFET N-CH 500V 20A TO3P |
|
IRF7805PBFRochester Electronics |
MOSFET N-CH 30V 13A 8SO |
|
AOTF10N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 10A TO220-3F |
|
APT29F100LRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 30A TO264 |