English
简体中文
CAP CER 0.082UF 500V X7R 1812
P-CHANNEL MOSFET
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK764R0-55B,118Nexperia |
MOSFET N-CH 55V 75A D2PAK |
|
NVMFS5C456NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 87A 5DFN |
|
NVR5198NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 1.7A SOT23-3 |
|
SIJ494DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 36.8A PPAK SO-8 |
|
FQB34N20TM-AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 31A D2PAK |
|
HUF76437P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC610PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 80A POWER33 |
|
BSC026N08NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 23A/100A TDSON |
|
FCPF250N65S3L1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 12A TO220F-3 |
|
STB45N65M5STMicroelectronics |
MOSFET N CH 650V 35A D2PAK |
|
IRFU9010PBFVishay / Siliconix |
MOSFET P-CH 50V 5.3A TO251AA |
|
IXFX100N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 100A PLUS247-3 |
|
SI3473DDV-T1-GE3Vishay / Siliconix |
MOSFET P-CHANNEL 12V 8A 6TSOP |