类型 | 描述 |
---|---|
系列: | AlphaSGT™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 16.5A (Ta), 58A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 11mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.6V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1725 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 6.2W (Ta), 73W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-251B |
包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF9Z14LPBFVishay / Siliconix |
MOSFET P-CH 60V 6.7A I2PAK |
|
5HN01M-TL-E-SARochester Electronics |
MOSFET N-CH 50V 100MA MCP |
|
SPA16N50C3Rochester Electronics |
SPA16N50 - 500V COOLMOS N-CHANNE |
|
FQPF2N60CRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
PSMN038-100YLXNexperia |
MOSFET N-CH 100V 30A LFPAK56 |
|
IRFW644BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSZ340N08NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 6A/23A 8TSDSON |
|
HUF75645P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 75A TO220-3 |
|
SI7617DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 35A PPAK1212-8 |
|
PHB33NQ20T,118Nexperia |
MOSFET N-CH 200V 32.7A D2PAK |
|
FDB8444-F085Rochester Electronics |
70A, 40V, 9.9OHM, N-CHANNEL, MO |
|
MMBF170Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA SOT23 |
|
TSM130NB06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 10A/51A 8PDFN |