类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 1.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
rds on (max) @ id, vgs: | 470mOhm @ 1.5A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 17 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 950 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 600mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TSMT6 (SC-95) |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHB15N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 15A D2PAK |
|
STY50N105DK5STMicroelectronics |
MOSFET N-CH 1050V 44A MAX247 |
|
RF4L040ATTCRROHM Semiconductor |
PCH -60V -4A POWER, DFN2020, MOS |
|
FDG312PRochester Electronics |
MOSFET P-CH 20V 1.2A SC88 |
|
TN0104N3-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 40V 450MA TO92-3 |
|
NVMFS5C426NAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/235A 5DFN |
|
IRF540NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A TO220AB |
|
IPS090N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 40A TO251-3 |
|
TK190U65Z,RQToshiba Electronic Devices and Storage Corporation |
DTMOS VI TOLL PD=130W F=1MHZ |
|
VN2222LLRochester Electronics |
MOSFET N-CH 60V 150MA TO92-3 |
|
AUIRFS4310ZTRLRochester Electronics |
AUIRFS4310Z - 75V-100V N-CHANNEL |
|
IXFT69N30PWickmann / Littelfuse |
MOSFET N-CH 300V 69A TO268 |
|
2SK3710Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 85A TO220S |