English
简体中文
MOSFET N-CH 100V 48A PPAK SO-8
IC PFC CTRLR TRANSITION 10SSOP
T2007 90-DEG ACT 2NC M16/PG9
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 48A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 14mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 68W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTLJF4156NTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
STH180N10F3-6STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6 |
|
NTGS1135PT1GRochester Electronics |
MOSFET P-CH 8V 4.6A 6TSOP |
|
NTGS3446T1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2.5A 6TSOP |
|
STB11NM60T4STMicroelectronics |
MOSFET N-CH 650V 11A D2PAK |
|
SISS30LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 16A/55.5A PPAK |
|
IRFBC30ASPBFVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
TMOSP12034Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFX32N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 32A PLUS247-3 |
|
FDS3570Rochester Electronics |
MOSFET N-CH 80V 9A 8SOIC |
|
IRFS7437TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |
|
RJK0351DPA-00#J0Rochester Electronics |
MOSFET N-CH 30V 40A 8WPAK |
|
IXTY1R6N50D2Wickmann / Littelfuse |
MOSFET N-CH 500V 1.6A TO252 |